| PART |
Description |
Maker |
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60D |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| FZ1200R33KF2C FZ1200R33KF2C-B5 |
IGBT Power Module
IGBT-Wechselrichter / IGBT-inverter
|
eupec GmbH
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| 4MBI300VG-120R-50 |
IGBT MODULE (V series) 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package
|
Fuji Electric
|
| CPV363M4KPBF |
IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)
|
Vishay Siliconix
|
| CPU165MK |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
| DIM800DDM17-A000 |
Dual Switch IGBT Module 800 A, 1700 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
|
| FP7G75US60 |
Transfer Molded Type IGBT Module; ; No of Pins: 7; Container: Rail 75 A, 600 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
| 1MBI300F-060 |
300 A, 600 V, N-CHANNEL IGBT
IGBT MODULE(F series)
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
